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NTMS5835NL
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /
T J
V GS = 0 V, I D = 250 m A
40
16
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 40 V
T J = 25 ° C
T J = 125 ° C
1
100
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
± 100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V GS(TH)
V GS = V DS , I D = 250 m A
1.0
1.85
3.0
V
Negative Threshold Temperature Coefficient
V GS(TH) /T J
7.0
mV/ ° C
Drain ? to ? Source On Resistance
Forward Transconductance
R DS(on)
g FS
V GS = 10 V, I D = 10 A
V GS = 4.5 V, I D = 10 A
V DS = 15 V, I D = 10 A
8.2
10.3
10
10
14
m W
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C ISS
2115
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C OSS
C RSS
Q G(TOT)
V GS = 0 V, f = 1 MHz, V DS = 20 V
V GS = 10 V, V DS = 20 V; I D = 10 A
315
220
40
50
pF
20
23
Threshold Gate Charge
Q G(TH)
2.0
nC
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q GS
Q GD
V GS = 4.5 V, V DS = 20 V; I D = 10 A
7.0
9.5
Plateau Voltage
Gate Resistance
V GP
R G
3.3
1.2
V
W
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
t d(ON)
15
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = 4.5 V, V DS = 20 V,
I D = 10 A, R G = 2.5 W
45
22
9.0
ns
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = 10 A
T J = 25 ° C
T J = 125 ° C
0.9
0.785
1.2
V
Reverse Recovery Time
t RR
26
Charge Time
Discharge Time
Reverse Recovery Charge
t a
t b
Q RR
V GS = 0 V, dIS/dt = 100 A/ m s,
I S = 10 A
13
13
17
ns
nC
3. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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